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BC850CLT1G

Part No BC850CLT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 225mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 108972-BC850CLT1G
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian BC850CLT1G CAD Model

Description

The BC850CLT1G from ON Semiconductor is a high-performance NPN bipolar (BJT) transistor that offers a seamless blend of efficiency and reliability for a wide range of electronic applications. This small signal transistor is designed to meet the stringent requirements of modern circuitry, providing designers with a versatile component that can be used in amplification and switching operations.

Key Features

  • Transistor Type: NPN - This allows for efficient current amplification when a small base current is applied.
  • Collector-Emitter Voltage (VCEO): 45 V - The maximum voltage between the collector and emitter at which the transistor can operate safely.
  • Collector-Base Voltage (VCBO): 50 V - The maximum voltage that can be applied between the collector and base without causing damage.
  • Emitter-Base Voltage (VEBO): 6 V - The maximum voltage the emitter-base junction can withstand.
  • Collector Current (IC): 100 mA - The maximum current that can flow through the collector, ensuring adequate current handling capability for a variety of applications.
  • Power Dissipation (Pd): 250 mW - The amount of power that can be dissipated by the transistor, which is critical for thermal management.
  • DC Current Gain (hFE): 420 - Indicates the transistor's ability to amplify the base current.
  • Package / Case: SOT-23-3 - A compact surface-mount package that saves valuable board space.

Applications

The BC850CLT1G is suitable for a variety of applications that require low power and medium voltage, such as:

  • General-purpose switching and amplification
  • Signal processing
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems
  • Portable devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BC850CLT1G is no exception. It is manufactured to the highest standards, ensuring consistent performance and longevity in the most demanding conditions. With its robust construction and proven design, this NPN transistor is a reliable choice for both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,405+ $0.0208 $50.0240
5,850+ $0.0171 $100.0350
9,095+ $0.0165 $150.0675
12,500+ $0.0160 $200.0000
16,130+ $0.0155 $250.0150
21,585+ $0.0139 $300.0315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 356,460 pieces
MOQ: 2405 pcs
Order Increment : 1 pcs
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