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BCP56T1G

Part No BCP56T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 150mA, 2V
Maximum Power Dissipation 1.5W
Frequency - Transition 130MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 011199-BCP56T1G
Family Name BCP56
Introduction Date December 06, 2001
ECCN EAR99
Country of Origin Malaysia, Morocco
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive, Audio
Ultra Librarian 3D Model Ultra Librarian BCP56T1G CAD Model

Description

ON Semiconductor BCP56T1G NPN Bipolar Transistor

The BCP56T1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed to offer a seamless blend of efficiency and reliability for a wide range of electronic applications. This versatile transistor is housed in a compact SOT-223 surface-mount package, which allows for efficient use of PCB space while also ensuring robust thermal performance and power handling capabilities.

Key Features

  • High Current Capability: The BCP56T1G is capable of handling continuous collector currents up to 1 A, making it suitable for moderate to high-power applications.
  • High Collector-Emitter Voltage: With a collector-emitter voltage (VCEO) of 80V, this device can be used in circuits with higher operating voltages, providing designers with greater flexibility.
  • Low Saturation Voltage: The low VCE(sat) ensures high efficiency by minimizing power loss during operation, which is particularly beneficial in switching applications.
  • High Performance: The transistor offers excellent gain characteristics with a minimum DC current gain (hFE) of 100 at 500 mA, which is essential for amplification applications.
  • Thermal Efficiency: The SOT-223 package is designed for enhanced thermal conduction, allowing the BCP56T1G to dissipate heat effectively during high-power operation.

Applications

The BCP56T1G is ideal for a variety of applications that require reliable switching and amplification. Its robust design and electrical characteristics make it well-suited for:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Control Systems
  • Linear Amplifiers
  • Audio Amplifiers
  • Signal Processing

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BCP56T1G is no exception. It is manufactured to meet stringent standards, ensuring high reliability and performance consistency. Whether for industrial, commercial, or consumer electronics, the BCP56T1G is an excellent choice for designers looking for a robust NPN transistor that can deliver in demanding situations.

Environmental Compliance

The BCP56T1G is also environmentally friendly, complying with RoHS directives, which restricts the use of certain hazardous substances in electronic equipment. This commitment to environmental standards reflects ON Semiconductor's dedication to sustainability and responsible manufacturing practices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2123 $50.9520
505+ $0.1989 $100.4445
785+ $0.1921 $150.7985
1,120+ $0.1787 $200.1440
1,455+ $0.1720 $250.2600
1,815+ $0.1653 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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