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BCW65ALT1G

Part No BCW65ALT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 32V 0.8A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 20nA
Typical Gain (hFE) (Min) 100 @ 100mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 111806-BCW65ALT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCW65ALT1G CAD Model

Description

ON Semiconductor BCW65ALT1G - General-Purpose NPN Transistor

The BCW65ALT1G is a small signal NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor, a company renowned for its expertise in power and signal management, logic, discrete, and custom semiconductor solutions. Designed for general-purpose amplifier and switching applications, this device is a versatile component that can be used in a wide array of electronic circuits.

This transistor is characterized by its high current gain bandwidth product and low collector-emitter saturation voltage, which make it suitable for high-performance applications in both digital and analog environments. With a collector current rating of 100 mA, it can handle moderate current loads while maintaining low power consumption, which is crucial for battery-powered devices.

The BCW65ALT1G comes in a SOT-23 package, which is a small footprint surface-mount device (SMD) that is ideal for space-constrained applications. This compact form factor allows for high-density PCB layouts, making it an excellent choice for modern electronic designs where board space is at a premium.

The device features a continuous collector current (Ic) of 100 mA and a peak collector current of up to 200 mA, providing sufficient current handling capability for a variety of applications. With a collector-emitter voltage (Vceo) of 32 V, it can comfortably work within the voltage parameters of most low to medium voltage circuits.

The BCW65ALT1G also boasts a high gain, with a DC current gain (hFE) range of 160 to 400 at a collector current of 2 mA, ensuring a consistent and reliable amplification factor for signal processing applications. The low noise figure also makes it an excellent choice for audio amplifiers and other sensitive audio electronics.

With its high reliability and robust performance, the BCW65ALT1G from ON Semiconductor is a go-to choice for designers and engineers looking for a general-purpose NPN transistor that offers a balance of efficiency, size, and performance. Whether it's for amplification, switching, or as a discrete component in a more complex circuit, this transistor is well-suited to meet the demands of a broad spectrum of electronic applications.

Overall, the BCW65ALT1G is a testament to ON Semiconductor's commitment to providing high-quality semiconductor products that enable innovative design and superior functionality in the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
910+ $0.0550 $50.0500
2,215+ $0.0452 $100.1180
3,425+ $0.0438 $150.0150
4,720+ $0.0424 $200.1280
6,115+ $0.0409 $250.1035
8,175+ $0.0367 $300.0225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 920 pieces
MOQ: 910 pcs
Order Increment : 1 pcs
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