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Same model may have multiple batches, images only for reference.
BD675AG Real Image
Same model may have multiple batches, images only for reference.

BD675AG

Part No BD675AG
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN DARL 45V 4A TO126 / Bipolar (BJT) Transistor NPN - Darlington 45 V 4 A 40 W Through Hole TO-126
Datasheet
BD675AG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Product Status Obsolete
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
Power - Max 40 W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
Base Product Number BD675
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names BD675AG-ND,BD675AGOS,2156-BD675AG-OS,ONSONSBD675AG
Standard Package 500
Win Source Part Number 1131504-BD675AG
Ultra Librarian 3D Model Ultra Librarian BD675AG CAD Model

Description

The BD675AG is an NPN Darlington transistor that belongs to the bipolar junction transistor (BJT) series.

  • Type: NPN Darlington Transistor
  • Power: 40W (Maximum)
  • Collector-Emitter Breakdown Voltage: 45V
  • Collector Current: 4A (Maximum)
  • Vce Saturation: 2.8V @ 40mA and 2A
  • DC Current Gain: 750 @ 2A and 3V
  • Operating Temperature Range: -55°C to 150°C
  • Package: Through-hole TO-225AA and TO-126-3
  • Standard Package: 500

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