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BD681G

Part No BD681G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box / TRANS NPN DARL 100V 4A TO225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 1.5A, 3V
Maximum Power Dissipation 40W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-225AA
Win Source Part Number 011459-BD681G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Family Name BD681
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian BD681G CAD Model

Description

The BD681G is a versatile bipolar junction transistor (BJT) from ON Semiconductor, a leading figure in the semiconductor industry. This particular transistor is part of the Darlington configuration, which means it is actually composed of two BJTs connected in such a way that the current amplified by the first is further amplified by the second. This results in a high current gain, making the BD681G an excellent choice for applications requiring a significant amplification of the input signal.

The BD681G is a PNP transistor, which means it is primarily designed to operate with the flow of holes as the charge carriers. It is capable of handling a collector-emitter voltage (VCEO) of 100V and a collector current (IC) of up to 4A, making it suitable for moderate power applications. Furthermore, its power dissipation is rated at 40W, allowing it to handle relatively high levels of power without succumbing to overheating, provided that adequate heat sinking is in place.

This transistor comes in a TO-225 package, which is a through-hole design that ensures easy mounting on printed circuit boards (PCBs) for prototyping or production purposes. The BD681G's high current gain and power handling capabilities make it a good fit for a wide range of applications, including but not limited to, power regulators, audio amplifiers, and switching applications where reliability and efficiency are crucial.

The BD681G is RoHS compliant, signifying that it adheres to the strict environmental standards set for electronic components, which restricts the use of certain hazardous substances. ON Semiconductor's commitment to environmental sustainability is reflected in the design and production of the BD681G, ensuring that it meets the needs of eco-conscious consumers and businesses.

To summarize, the BD681G is a high-performance PNP Darlington transistor that offers a blend of power handling, high current gain, and reliability. Its robust design and compliance with environmental standards make it a smart and responsible choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8383 $50.2980
150+ $0.6878 $103.1700
230+ $0.6663 $153.2490
315+ $0.6448 $203.1120
405+ $0.6233 $252.4365
540+ $0.5589 $301.8060
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Availability: 500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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