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BDV64B

Part No BDV64B
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 100V 10A SOT93
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
Power - Max 125 W
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-218-3
Supplier Device Package SOT-93
Base Product Number BDV64
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 570291-BDV64B
Ultra Librarian 3D Model Ultra Librarian BDV64B CAD Model

Description

ON Semiconductor BDV64B Darlington Transistor

The BDV64B from ON Semiconductor is a high-power PNP Darlington transistor designed to meet the needs of a wide variety of applications requiring robust performance. This semiconductor device is known for its high current gain and integrated suppression diode, which makes it an excellent choice for inductive load control in industrial and consumer applications.

Constructed with epitaxial base technology and housed in a TO-218 package, the BDV64B is capable of withstanding high temperatures and delivering reliable performance even under challenging conditions. Its maximum collector-emitter voltage (V<sub>CEO) is rated at 100V, and it can handle collector currents up to 12A continuously, with peak currents significantly higher, making it suitable for driving high-power circuits.

The BDV64B's high current gain (h<sub>FE) minimizes the input current required to control larger loads, which is particularly beneficial in applications where input drive current is limited. Moreover, the integrated suppression diode protects against voltage spikes that can occur when switching inductive loads, thereby enhancing the longevity and reliability of the device.

Key features of the BDV64B include:

  • High DC current gain (h<sub>FE)
  • Collector-Emitter Voltage (V<sub>CEO): 100V
  • Continuous Collector Current (I<sub>C): 12A
  • Integrated suppression diode for inductive load protection
  • TO-218 package for efficient heat dissipation

This transistor is commonly utilized in power regulators, DC-DC converters, motor controllers, and other high-power switching applications. Its robustness also makes it a popular choice in automotive electronics, where reliability and durability are paramount.

ON Semiconductor's commitment to quality ensures that the BDV64B transistor provides consistent performance, making it a trusted component in the design of high-reliability circuits. For designers and engineers looking for a powerful solution to manage high-power switching tasks, the BDV64B offers a perfect blend of performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1769 $58.8450
120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,760 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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