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BVSS84LT1G

Part No BVSS84LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 130MA SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 2.2nC @ 10V
Max Input Capacitance 36pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 108997-BVSS84LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BVSS84LT1G CAD Model

Description

ON Semiconductor BVSS84LT1G - P-Channel Enhancement-Mode MOSFET

The BVSS84LT1G is a high-performance, P-channel enhancement-mode Field Effect Transistor (FET) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of electronic applications.

This particular MOSFET is designed to operate as a switch with a control voltage on its gate terminal, allowing or blocking current flow through the device. The BVSS84LT1G features a compact SOT-23 package, making it an excellent choice for space-constrained applications. Its P-channel configuration means that it is optimized for low-side switch operations in a circuit, making it an ideal choice for load-switching applications.

The BVSS84LT1G boasts a drain-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -230 mA. These specifications highlight the MOSFET's ability to handle moderate power levels, suitable for a variety of applications including power management, load switching, and battery management in portable devices.

Key features of the BVSS84LT1G include low threshold voltage (V<sub>GS(th)), which ensures that the device can be easily turned on with low gate voltages, making it compatible with low-voltage logic signals. Additionally, the MOSFET has low on-resistance (R<sub>DS(on)), which minimizes power losses when the device is in the on-state, thereby improving overall efficiency.

The BVSS84LT1G also exhibits fast switching speed, which is crucial for applications that require rapid on-off cycles. Its robustness is further enhanced by its high-temperature performance, ensuring reliability even under challenging thermal conditions.

As with all ON Semiconductor products, the BVSS84LT1G is designed with an emphasis on environmental sustainability. It is RoHS compliant, ensuring that it meets the European Union's restrictions on the use of certain hazardous substances in electronic equipment. This makes the BVSS84LT1G not only an efficient and reliable component for your electronic designs but also an environmentally conscious choice.

In summary, the ON Semiconductor BVSS84LT1G is a versatile, efficient, and reliable P-channel MOSFET that offers excellent performance for a wide range of power management applications, all in a small footprint package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
545+ $0.0919 $50.0855
1,330+ $0.0754 $100.2820
2,055+ $0.0731 $150.2205
2,830+ $0.0707 $200.0810
3,655+ $0.0684 $250.0020
4,895+ $0.0613 $300.0635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 545 pcs
Order Increment : 1 pcs
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