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DTA113EM3T5G

Part No DTA113EM3T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V SOT723 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Series -
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 260 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
Base Product Number DTA113
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 8,000 pcs
Win Source Part Number 1381962-DTA113EM3T5G
Ultra Librarian 3D Model Ultra Librarian DTA113EM3T5G CAD Model

Description

ON Semiconductor DTA113EM3T5G PNP Transistor

The DTA113EM3T5G is a high-quality PNP transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is a part of the extensive portfolio of bipolar transistors designed to cater to a wide range of applications requiring amplification and switching capabilities. The DTA113EM3T5G is specifically engineered to offer excellent performance with a focus on power management and signal processing tasks.

Key Features:

  • Type: PNP Bipolar Digital Transistor (BRT)
  • Configuration: Single
  • Maximum Collector-Emitter Voltage (Vceo): 50V
  • Maximum Collector-Base Voltage (Vcbo): 50V
  • Maximum Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 100mA
  • DC Current Gain (hFE): Minimum 100 at 5V Vce, 5mA Ic
  • Resistor Ratio: 1/10
  • Power Dissipation: 150mW
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (TO-236)
  • RoHS Compliant: Yes

The DTA113EM3T5G transistor is designed with a built-in bias resistor network, enabling it to function as an inverter or interface between two different voltage levels within a circuit. This built-in feature simplifies circuit design and reduces component count, which can lead to cost savings and a more compact PCB layout. The SOT-23 package is ideal for space-constrained applications, and its small footprint is perfect for high-density circuit designs.

ON Semiconductor's commitment to quality ensures that the DTA113EM3T5G meets stringent standards, providing reliable and consistent performance. This transistor is well-suited for use in a variety of applications, including but not limited to, input/output interfacing, driver circuits, and switch mode power supplies. Its RoHS compliance underscores the company's dedication to environmental responsibility and the production of eco-friendly products.

Whether you're designing consumer electronics, industrial control systems, or automotive applications, the DTA113EM3T5G PNP transistor from ON Semiconductor is a versatile component that offers a blend of efficiency, reliability, and innovation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
870+ €0.0603 €52.4513
2,115+ €0.0496 €104.8850
3,280+ €0.0480 €157.3060
4,505+ €0.0465 €209.5212
5,830+ €0.0450 €262.1597
7,815+ €0.0403 €314.5775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 870 pcs
Order Increment : 1 pcs
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