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Same model may have multiple batches, images only for reference.
GA1A4Z-T1-A
Same model may have multiple batches, images only for reference.

GA1A4Z-T1-A

Part No GA1A4Z-T1-A
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single, Pre - Biased
Description GA1A4Z - SWITCHING REGISTER BUI / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-70
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Renesas
Package Bulk
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
RoHS Status RoHS non-compliant
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-GA1A4Z-T1-A
Standard Package 1
Win Source Part Number 1129932-GA1A4Z-T1-A
Ultra Librarian 3D Model Ultra Librarian GA1A4Z-T1-A CAD Model

Description

The Renesas NPN - Pre-Biased transistor is a high-quality component that offers a voltage - collector emitter breakdown (Max) of 50 V and a current - collector (Ic) (Max) of 100 mA.

  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 100 mA
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
  • Package/Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 5mA, 5V
  • Resistor - Base (R1): 10 kOhms
  • Status: Obsolete

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