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Same model may have multiple batches, images only for reference.
RN2116MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2116MFV,L3F

Part No RN2116MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2116
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 264-RN2116MFVL3FTR,264-RN2116MFVL3FDKR,RN2116MFV,L3F(B,264-RN2116MFVL3FCT
Standard Package 8,000
Win Source Part Number 1109466-RN2116MFV,L3F
Ultra Librarian 3D Model Ultra Librarian RN2116MFV,L3F CAD Model

Description

The RN2116MFV,L3F is a PNP pre-biased transistor that is designed for use in low-power, high-speed switching applications.

  • Power Dissipation: 150mW
  • Voltage Rating: 50V
  • Current Rating: 100mA
  • Package: 6-pin SOT-723
  • Operating Temperature: 150°C
  • DC Current Gain: 50 @ 10mA and 5V
  • RoHS: Compliant
  • Application: Power Supplies, Motor Control, and Industrial Automation

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