EN
  • EN
  • DE
  • IT

DTC113EM3T5G

Part No DTC113EM3T5G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 50V SOT723  /  Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 260 mW Surface Mount SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 260 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package SOT-723
Base Product Number DTC113
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names ONSONSDTC113EM3T5G,2156-DTC113EM3T5G-OS
Standard Package 8,000
Win Source Part Number 1161200-DTC113EM3T5G
Ultra Librarian 3D Model Ultra Librarian DTC113EM3T5G CAD Model

Description

ON Semiconductor DTC113EM3T5G Bipolar Transistor

The DTC113EM3T5G from ON Semiconductor is a high-performance NPN bipolar (BJT) digital transistor, designed to offer a compact and efficient solution for switching applications. This digital transistor is a pre-biased transistor, which means it has a built-in resistor to the base, simplifying circuit design by reducing component count. The DTC113EM3T5G is housed in a small surface-mount package, the SOT-23, making it an ideal choice for space-constrained applications.

Key Features:

  • Integrated Bias Resistor: The built-in resistor to the base eliminates the need for external components, facilitating easier design and a more stable performance.
  • High Current Gain: With a high DC current gain (hFE), this transistor can amplify a small input current into a larger output current, making it suitable for signal amplification.
  • Low V<sub>CE(sat): It offers low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency during operation.
  • Complementary PNP Type: The DTC113EM3T5G has a complementary PNP type available, allowing for design flexibility in various circuit configurations.
  • RoHS Compliant: This product meets the requirements of the RoHS directive, making it environmentally friendly by avoiding the use of hazardous substances.

Applications:

The DTC113EM3T5G is versatile and can be used in a wide range of applications, including:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal processing
  • Power management
  • Control systems

ON Semiconductor's commitment to quality ensures that the DTC113EM3T5G is a reliable component for designers looking to create energy-efficient and space-saving solutions. Its pre-biased configuration and high-performance characteristics make it a go-to choice for engineers in both commercial and industrial markets.

Whether you're working on consumer electronics, automotive systems, or industrial controls, the DTC113EM3T5G offers the performance and reliability that ON Semiconductor is known for. Its compact size and ease of integration make it an excellent choice for innovators and manufacturers who demand the best in their circuit designs.

You May Also Be Interested in

M/A-Com Technology Solutions
RF TRANS NPN 55V 211-11 / RF Transistor NPN 55V 20A 150W Chassis Mount 211-11, Style 2
Need more? Email Us
M/A-Com Technology Solutions
TRANS RF NPN 35V 9A 316-01 / RF Transistor NPN 35V 9A 80W Chassis Mount 316-01, STYLE 1
Need more? Email Us
Microsemi Corporation
RF POWER TRANSISTOR
Need more? Email Us
Microsemi Corporation
TRANSISTOR
Need more? Email Us
ON Semiconductor
RF TRANS NPN 12V 10GHZ 4-MCPH
Need more? Email Us
Microsemi Corporation
RF TRANS PNP 30V 30MA UB
Need more? Email Us
Microsemi Corporation
RF POWER TRANSISTOR
Need more? Email Us
M/A-Com Technology Solutions
RF TRANS NPN 18V 211-11 / RF Transistor NPN 18V 20A 80W Chassis Mount 211-11, Style 2
Lowest to $130.5264
Rohm Semiconductor
RF TRANS NPN 25V 300MHZ EMT3
Need more? Email Us

Top Sellers

TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.6918
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7128
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6155
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.8313
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.5279
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $4.2767
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.4647
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.2767
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $21.6579
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $20.1955
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.5429
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1901
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $1.6632
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess