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FCB099N65S3

Part No FCB099N65S3
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET® III
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 400 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D²PAK-3 (TO-263-3)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number FCB099
Other Names 488-FCB099N65S3TR
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278206-FCB099N65S3
Ultra Librarian 3D Model Ultra Librarian FCB099N65S3 CAD Model

Description

ON Semiconductor FCB099N65S3: High-Performance Power MOSFET

The FCB099N65S3 is a state-of-the-art power MOSFET from ON Semiconductor, designed to meet the rigorous demands of modern electronic circuits. This N-channel MOSFET is a part of ON Semiconductor's high-performance portfolio, featuring a 650V drain-to-source voltage (V<sub>DS) that ensures robust operation even in high voltage applications.

With a continuous drain current (I<sub>D) of 99A, this power MOSFET is capable of handling significant power without compromising on efficiency or performance. Its low on-resistance (R<sub>DS(on)) of just 0.029 Ohm minimizes power losses and improves overall system efficiency, which is crucial for energy-sensitive designs.

The FCB099N65S3 incorporates advanced silicon technology, which provides an excellent figure of merit (FOM) and reduces switching losses. This is particularly beneficial for applications such as power supply units, inverters, and motor drives where efficiency is paramount. The device's fast switching characteristics also make it suitable for high-frequency circuits, further broadening its application scope.

Engineered for reliability, the FCB099N65S3 offers a robust body diode that can handle high surge currents, ensuring safe operation under extreme conditions. This feature, combined with its high avalanche ruggedness, makes it an ideal choice for applications that may experience unexpected voltage spikes or surges.

ON Semiconductor has packaged the FCB099N65S3 in a TO-247 package, which provides excellent thermal performance and is compatible with standard mounting techniques. The package's design allows for efficient heat dissipation, maintaining the MOSFET's performance even under high thermal loads.

This power MOSFET is also RoHS compliant, meeting the environmental standards required by global regulations. By choosing the FCB099N65S3, designers can ensure their products are not only high-performing but also environmentally conscious.

In summary, the FCB099N65S3 from ON Semiconductor is a powerful and reliable component that offers impressive efficiency, fast switching, and robust operation, making it an excellent choice for a wide range of high-voltage and high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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