ON Semiconductor FCB260N65S3 Power MOSFET

The FCB260N65S3 is a state-of-the-art power MOSFET from ON Semiconductor, designed to deliver high-performance efficiency and reliability in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are specifically engineered to reduce power losses and improve system reliability.

With a robust and durable design, the FCB260N65S3 is characterized by its 650V N-channel SuperFET III MOSFET technology. This technology is known for its low on-resistance and low gate charge, which contribute to its exceptional efficiency. The device's high current capability and fast-switching speed make it an ideal choice for high-performance power conversion applications.

Key Features:

• 650V N-channel SuperFET III MOSFET
• Low on-resistance (R<sub>DS(on)) for improved efficiency
• Low gate charge (Q<sub>g) for faster switching
• High current capability
• 100% avalanche tested for reliable operation
• Low effective output capacitance (C<sub>oss eff.)
• RoHS compliant and Halogen-free

Applications:

• Uninterruptible Power Supplies (UPS)
• Power Inverters
• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• LED Lighting
• High-frequency converters

The FCB260N65S3 offers enhanced system efficiency that is particularly well-suited for high-power applications where energy savings are critical. Its rugged design ensures stability and longevity under harsh conditions, making it a reliable component for industrial, automotive, and consumer markets. With its combination of advanced features and proven performance, the FCB260N65S3 from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions.