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FCD7N60TM-WS

Part No FCD7N60TM-WS
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A DPAK / N-Channel 600 V 7A (Tc) 83W (Tc) Surface Mount TO-252AA
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number FCD7N60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FCD7N60TM_WSCT-ND,FCD7N60TM-WSDKR,FCD7N60TM_WSDKR,FCD7N60TM_WSTR-ND,FCD7N60TM-WSCT,FCD7N60TM_WSCT,FCD7N60TM_WS,FCD7N60TM_WSTR,FCD7N60TM_WSDKR-ND,FCD7N60TM_WS-ND,FCD7N60TM-WSTR
Standard Package 2,500
Win Source Part Number 957975-FCD7N60TM-WS
Ultra Librarian 3D Model Ultra Librarian FCD7N60TM-WS CAD Model

Description

ON Semiconductor FCD7N60TM-WS Power MOSFET

The FCD7N60TM-WS from ON Semiconductor is a high-performance, N-channel Power MOSFET designed for a variety of applications requiring high efficiency and power density. This MOSFET utilizes ON Semiconductor's advanced technology to provide superior switching performance and high reliability, making it an ideal choice for power conversion and management in a wide range of electronic systems.

Key Features

  • High Current Capability: The FCD7N60TM-WS is capable of handling continuous drain currents up to 7A, making it suitable for high-power applications.
  • Low On-Resistance: With a low on-resistance (RDS(on)) of just 1.25Ω, this MOSFET ensures minimal power loss and improved efficiency during operation.
  • High Voltage Tolerance: It can withstand drain-source voltages up to 600V, providing a wide safety margin for applications involving high voltage operations.
  • Fast Switching Speed: The device features fast switching characteristics, which reduces switching losses and enhances overall performance.
  • Enhanced Thermal Performance: The FCD7N60TM-WS is encapsulated in a TO-220 package, which offers excellent thermal conduction properties, ensuring the MOSFET stays cool under heavy loads.
  • Robustness: This MOSFET is ruggedized against harsh conditions, featuring a robust body diode that can handle high surge currents and energy pulses.

Applications

The versatility of the FCD7N60TM-WS allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting Systems
  • Uninterruptible Power Supplies (UPS)

With its combination of high voltage capability, efficiency, and reliability, the FCD7N60TM-WS from ON Semiconductor is a smart choice for designers looking to optimize their power management solutions. Whether you are developing consumer electronics, industrial systems, or automotive applications, this MOSFET delivers the performance and ruggedness required for today's demanding electronic environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1730 $52.7850
105+ $0.9625 $101.0625
165+ $0.9324 $153.8460
225+ $0.9023 $203.0175
290+ $0.8722 $252.9380
385+ $0.7820 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,108 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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