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FCH029N65S3-F155

Part No FCH029N65S3-F155
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 75A TO247-3 / N-Channel 650 V 75A (Tc) 463W (Tc) Through Hole TO-247-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 29mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 201 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6340 pF @ 400 V
Power Dissipation (Max) 463W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number FCH029
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FCH029N65S3-F155
Standard Package 30
Win Source Part Number 1324722-FCH029N65S3-F155
Ultra Librarian 3D Model Ultra Librarian FCH029N65S3-F155 CAD Model

Description

ON Semiconductor FCH029N65S3-F155 N-Channel MOSFET

The ON Semiconductor FCH029N65S3-F155 is a high-performance, N-channel MOSFET that is designed to meet the needs of modern high-efficiency power conversion applications. This device is part of the ON Semiconductor portfolio of power semiconductors that are known for their reliability, efficiency, and state-of-the-art performance.

With a drain-to-source voltage (V<sub>DS) of 650V, the FCH029N65S3-F155 is well-suited for high-voltage power systems. It has a continuous drain current (I<sub>D) of 29A at 25°C, making it capable of handling significant power levels. The low on-resistance (R<sub>DS(on)) of just 155 mΩ minimizes power losses and improves overall efficiency, which is crucial for applications such as power supplies, inverters, and motor control systems.

The device is built using ON Semiconductor's advanced silicon technology, which provides superior switching performance. The fast switching speed of the FCH029N65S3-F155 reduces switching losses and enables operation at higher frequencies, which can contribute to the miniaturization of power supplies and other electronic components.

The MOSFET also features a robust body diode with a low reverse recovery charge (Q<sub>rr), which is important for applications that require high-speed diode recovery, such as active power factor correction (PFC) circuits. This characteristic helps to reduce noise and electromagnetic interference (EMI) in sensitive electronic equipment.

For ease of integration into various designs, the FCH029N65S3-F155 comes in a TO-247 package, which is known for its high thermal performance and mechanical robustness. This package allows for efficient heat dissipation, ensuring reliable operation even under high thermal conditions.

ON Semiconductor has equipped the FCH029N65S3-F155 with industry-standard features such as a maximum junction temperature of 150°C and a threshold voltage (V<sub>th) that ensures consistent performance across a range of temperatures and operating conditions.

In summary, the FCH029N65S3-F155 from ON Semiconductor is an exemplary choice for designers looking for a high-voltage, high-efficiency N-channel MOSFET. Its combination of power handling, efficiency, and fast switching capabilities makes it a versatile component for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $28.8889 $57.7778
5+ $23.7038 $118.5190
7+ $22.9630 $160.7410
9+ $22.2223 $200.0007
12+ $21.4815 $257.7780
16+ $19.2593 $308.1488
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 420 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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