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FCH041N65F-F155

Part No FCH041N65F-F155
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 76A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 8 Weeks
Features N-Channel 650 V 76A (Tc) 595W (Tc) Through Hole TO-247-3
Manufacturer ON Semiconductor
Series FRFET®, SuperFET® II
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name FCH041
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FCH041N65FF155, FCH041N65F_F155, FCH041N65F_F155-ND
Quantity per package 450
Popularity High
Supply and Demand Status Balance
Win Source Part Number 918959-FCH041N65F-F155
Ultra Librarian 3D Model Ultra Librarian FCH041N65F-F155 CAD Model

Description

ON Semiconductor FCH041N65F-F155 N-Channel MOSFET

The FCH041N65F-F155 is a high-performance N-channel MOSFET produced by ON Semiconductor, a renowned leader in the semiconductor industry. This advanced power MOSFET is designed to deliver exceptional efficiency and power density, making it an ideal choice for a wide range of applications, including power supplies, inverters, and motor control systems.

Constructed with ON Semiconductor's state-of-the-art silicon technology, the FCH041N65F-F155 boasts an impressive 650V drain-to-source breakdown voltage (V<sub>DS), which ensures reliable operation even under high voltage conditions. It features a low on-resistance (R<sub>DS(on)) of just 41 mΩ at a gate drive of 10V, providing reduced conduction losses and enhancing overall system efficiency.

One of the key attributes of this MOSFET is its low total gate charge (Q<sub>g), which translates to faster switching performance. This characteristic is particularly beneficial for high-frequency power conversion applications where switching losses can significantly impact efficiency and thermal performance. Additionally, the FCH041N65F-F155 offers a robust continuous drain current (I<sub>D) of 63A, ensuring it can handle high power levels without compromise.

The device is encapsulated in a TO-247 package, which is known for its excellent thermal characteristics. This package provides a high level of heat dissipation, allowing the MOSFET to operate at lower temperatures and thereby extend the lifespan of the product. The FCH041N65F-F155 also features a maximum junction temperature of 175°C, offering a wide operating temperature range for demanding environments.

Furthermore, the FCH041N65F-F155 is engineered to provide superior ruggedness and reliability. It is equipped with a fast body diode, which ensures safe operation during hard-switching events and reduces the risk of failure due to reverse recovery issues. This makes the MOSFET a dependable choice for applications that require both high performance and durability.

In summary, the ON Semiconductor FCH041N65F-F155 N-channel MOSFET is a powerful and efficient solution for designers looking to optimize their power conversion systems. Its combination of high voltage capability, low on-resistance, fast switching, and robust thermal management make it a versatile and reliable component for a multitude of high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.7031 $68.5155
11+ $11.2436 $123.6796
16+ $10.8923 $174.2768
22+ $10.5409 $231.8998
29+ $10.1896 $295.4984
38+ $9.1355 $347.1490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,460 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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