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FCMT125N65S3

Part No FCMT125N65S3
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A 4PQFN / N-Channel 650 V 24A (Tc) 181W (Tc) Surface Mount 4-PQFN (8x8)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 400 V
Power Dissipation (Max) 181W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package 4-PQFN (8x8)
Case / Package 4-PowerTSFN
Base Product Number FCMT125
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FCMT125N65S3OSTR,FCMT125N65S3OSDKR,FCMT125N65S3OSCT
Standard Package 3,000
Win Source Part Number 1323968-FCMT125N65S3
Ultra Librarian 3D Model Ultra Librarian FCMT125N65S3 CAD Model

Description

The ON Semiconductor FCMT125N65S3 is a high-performance N-Channel MOSFET designed for a variety of applications, ranging from power management solutions to energy-efficient power conversion. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, leveraging advanced technology to provide excellent power handling capabilities with reduced energy losses.

Featuring a robust and durable design, the FCMT125N65S3 operates at a drain-to-source voltage (V<sub>DS) of 650V, which is ideal for high voltage applications. It has a continuous drain current (I<sub>D) of 22A at 25°C, ensuring that it can handle significant power without overheating. The device also boasts a low on-resistance (R<sub>DS(on)) of 125mΩ, which minimizes conduction losses and enhances overall efficiency.

The FCMT125N65S3 is equipped with fast switching capabilities, thanks to its total gate charge (Q<sub>G) of 47nC, which is beneficial for applications requiring high-speed power switching. This feature, combined with its low intrinsic capacitance, makes the MOSFET an excellent choice for high-frequency power converters and inverters.

ON Semiconductor has designed the FCMT125N65S3 with reliability in mind. It includes an integrated body diode, which provides reverse current protection and ensures safe operation during inductive switching. The device is also characterized by its high avalanche energy rating, which provides robustness against unexpected voltage spikes.

The FCMT125N65S3 comes in a TO-247 package, which is widely recognized for its high thermal performance. This package allows for efficient heat dissipation, maintaining the MOSFET's stability and longevity even under high thermal stress conditions. Suitable for through-hole mounting, this package is easy to integrate into a variety of circuit boards.

In summary, the ON Semiconductor FCMT125N65S3 N-Channel MOSFET is a powerful and efficient solution for engineers looking to improve power density, efficiency, and reliability in their designs. With its high voltage capability, low on-resistance, fast switching, and thermal efficiency, this MOSFET is well-suited for demanding applications such as power supplies, motor drives, and renewable energy systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.0785 $63.7065
20+ $5.8080 $116.1600
31+ $5.6265 $174.4215
43+ $5.4451 $234.1393
55+ $5.2635 $289.4925
74+ $4.7190 $349.2060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 73 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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