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FCMT250N65S3

Part No FCMT250N65S3
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A POWER88  /  N-Channel 650 V 12A (Tc) 90W (Tc) Surface Mount Power88
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET® III
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 400 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package Power88
Package / Case 4-PowerTSFN
Base Product Number FCMT250
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FCMT250N65S3OSCT,FCMT250N65S3-ND,FCMT250N65S3OSTR,FCMT250N65S3OSDKR
Standard Package 3,000
Win Source Part Number 1058684-FCMT250N65S3
Ultra Librarian 3D Model Ultra Librarian FCMT250N65S3 CAD Model

Description

The FCMT250N65S3 is a state-of-the-art silicon carbide (SiC) MOSFET brought to you by ON Semiconductor, a company renowned for its innovative approach in power semiconductor technology. This power MOSFET is designed to meet the high-efficiency and reliability requirements of modern power systems, making it an ideal solution for a wide range of applications, including electric vehicles (EVs), solar inverters, and high-performance power supplies.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, offering designers a margin for safety and reliability.
  • Low On-Resistance: The FCMT250N65S3 boasts a low on-resistance (R<sub>DS(on)) that minimizes conduction losses, enhancing the efficiency of power conversion systems.
  • Fast Switching Speed: The device's fast switching capabilities reduce switching losses and improve the performance of power electronic systems, especially in applications where high switching frequencies are required.
  • High-Temperature Operation: Engineered to perform reliably in high-temperature environments, this MOSFET can operate at junction temperatures up to 150°C, enabling its use in harsh conditions.
  • Robust SiC Technology: Silicon carbide technology provides superior thermal characteristics and improved power density compared to traditional silicon devices.

Applications

  • Electric Vehicle (EV) Powertrains
  • Photovoltaic (Solar) Inverters
  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating Systems

Advantages

The FCMT250N65S3 from ON Semiconductor offers several advantages for power system designers. Its robust design ensures reliability and long-term durability, while its efficiency reduces energy consumption and heat generation. The MOSFET's compatibility with high switching frequencies enables compact and lightweight power system designs, which is particularly beneficial in space-constrained applications such as EV powertrains and portable power devices. With its high performance and versatility, the FCMT250N65S3 is a top choice for engineers looking to optimize their power systems for maximum efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2389 $52.3890
24+ $4.2986 $103.1664
37+ $4.1642 $154.0754
50+ $4.0299 $201.4950
65+ $3.8956 $253.2140
86+ $3.4926 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,697 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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