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FCPF380N65FL1-F154

Part No FCPF380N65FL1-F154
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10.2A TO220F-3  /  N-Channel 650 V 10.2A (Tc) 33W (Tc) Through Hole TO-220F-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10.2A (Tc)
Rds On (Max) @ Id, Vgs 380mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 100 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Base Product Number FCPF380
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FCPF380N65FL1-F154
Standard Package 1,000
Win Source Part Number 1024128-FCPF380N65FL1-F154
Ultra Librarian 3D Model Ultra Librarian FCPF380N65FL1-F154 CAD Model

Description

ON Semiconductor FCPF380N65FL1-F154 Power MOSFET

The FCPF380N65FL1-F154 from ON Semiconductor is a high-performance Power MOSFET designed to meet the demanding requirements of modern electronic applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, offering superior power handling capabilities with low conduction losses.

This 650V, N-channel MOSFET is built using ON Semiconductor's proprietary SuperFET III technology, which provides an optimal balance between low on-resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), resulting in a highly efficient power device. The FCPF380N65FL1-F154 is well-suited for a variety of applications, including power supplies, industrial equipment, lighting solutions, and high-performance computing systems.

Key features of the FCPF380N65FL1-F154 include its robust continuous drain current (I<sub>D) of 11 A, which ensures reliable operation even under high current demands. The device also boasts a low threshold voltage (V<sub>th), enabling it to switch on and off at lower voltages, which is beneficial for reducing power consumption in various applications.

The FCPF380N65FL1-F154 is packaged in a TO-220FL package, known for its excellent thermal performance and ease of mounting on printed circuit boards (PCBs). The package is also designed to handle high levels of thermal stress, ensuring long-term reliability and stability of the device under varying operating conditions.

For safety and protection, the FCPF380N65FL1-F154 incorporates several built-in features, such as a fast body diode for free-wheeling applications and a robust gate oxide for enhanced device longevity. Its maximum junction temperature of 150°C allows for operation in high-temperature environments without compromising performance.

In summary, the FCPF380N65FL1-F154 Power MOSFET from ON Semiconductor is a high-efficiency, reliable power solution that offers excellent electrical characteristics and thermal performance for a wide range of power applications. Its advanced technology and robust design make it an ideal choice for designers looking to optimize their power management systems.

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