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FDB86363-F085

Part No FDB86363-F085
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 110A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Package Tape & Reel
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 40 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number FDB86363
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 944800-FDB86363-F085
Ultra Librarian 3D Model Ultra Librarian FDB86363-F085 CAD Model

Description

Product Overview: FDB86363-F085

The FDB86363-F085 is a state-of-the-art power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance, N-Channel MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a perfect blend of low on-resistance, high switching speed, and thermal efficiency.

Key Features

  • Low On-Resistance: The FDB86363-F085 boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall efficiency, making it suitable for high-efficiency power management designs.
  • High Switching Speed: Engineered for fast switching applications, this MOSFET provides rapid transition performance, crucial for reducing switching losses and improving response times in power circuits.
  • High Current Capacity: With its robust design, the FDB86363-F085 can handle high current loads, making it ideal for demanding power applications that require reliable current handling capabilities.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology enhances the device's overall performance by optimizing the cell structure for reduced gate charge and lower capacitances.
  • Thermal Management: The FDB86363-F085 is equipped with advanced thermal characteristics that ensure stable operation even under high-temperature conditions, which is critical for maintaining performance and prolonging lifespan.

Applications

The versatility of the FDB86363-F085 makes it suitable for a wide array of applications. It is commonly used in DC/DC converters, motor drives, power supply units, and other power-intensive modules. Its efficiency and reliability also make it an excellent choice for automotive applications, renewable energy systems, and high-performance computing.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The FDB86363-F085 is no exception; it undergoes rigorous testing and quality control measures to ensure it meets the highest standards. Customers can rely on this MOSFET for consistent performance and durability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.2179 $52.1790
24+ $4.2814 $102.7536
37+ $4.1476 $153.4612
50+ $4.0138 $200.6900
65+ $3.8800 $252.2000
87+ $3.4786 $302.6382
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,200 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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