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FDB86366-F085

Part No FDB86366-F085
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 110A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 80 V 110A (Tc) 176W (Tj) Surface Mount D²PAK
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name FDB86366
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FDB86366-F085CT, FDB86366-F085DKR, FDB86366_F085, FDB86366-F085TR, FDB86366_F085CT-ND, FDB86366_F085TR-ND, FDB86366_F085-ND, FDB86366_F085TR, FDB86366_F085DKR-ND
Quantity per package 800
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871587-FDB86366-F085
Ultra Librarian 3D Model Ultra Librarian FDB86366-F085 CAD Model

Description

ON Semiconductor FDB86366-F085 N-Channel PowerTrench® MOSFET

The ON Semiconductor FDB86366-F085 is a high-performance N-Channel PowerTrench® MOSFET designed for a wide range of applications, including power supplies, motor drives, and power conversion systems. This MOSFET utilizes ON Semiconductor's advanced PowerTrench technology to offer superior performance in terms of low on-resistance, high switching efficiency, and robust thermal characteristics.

With a drain-to-source voltage (V<sub>DS) of 100V and a continuous drain current (I<sub>D) of 80A at 25°C, the FDB86366-F085 is capable of handling high power densities while maintaining excellent thermal stability. The device's low gate charge (Q<sub>g) and reduced switching losses make it ideal for high-frequency applications, contributing to energy-efficient operation in power management circuits.

The FDB86366-F085 also features a maximum R<sub>DS(on) of 4.5 mΩ at V<sub>GS = 10V, ensuring minimal conduction losses and making it suitable for applications where low on-state resistance is critical. Its robust body diode can handle high surge currents, providing additional reliability during operation.

Encased in a TO-263 (D2PAK) package, the FDB86366-F085 is not only easy to mount on a printed circuit board but also offers excellent heat dissipation capabilities. Its package is designed to optimize the electrical and thermal performance, which is essential for maintaining long-term reliability in demanding environments.

Key Features:

  • 100V N-Channel MOSFET
  • Continuous drain current: 80A
  • Low R<sub>DS(on): 4.5 mΩ at V<sub>GS = 10V
  • High switching performance with low gate charge
  • PowerTrench technology for reduced losses and enhanced efficiency
  • TO-263 (D2PAK) package for superior thermal performance

The FDB86366-F085 is an excellent choice for designers looking for a high-efficiency, reliable MOSFET that can deliver high performance in a compact footprint. ON Semiconductor's commitment to quality and performance makes this product a valuable component in any power management or conversion system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,580 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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