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FDBL0200N100

Part No FDBL0200N100
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 300A 8HPSOF / N-Channel 100 V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9760 pF @ 50 V
Power Dissipation (Max) 429W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 8-HPSOF
Case / Package 8-PowerSFN
Base Product Number FDBL0200
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FDBL0200N100OSCT,FDBL0200N100-ND,FDBL0200N100OSDKR,FDBL0200N100OSTR
Standard Package 2,000
Win Source Part Number 1323930-FDBL0200N100
Ultra Librarian 3D Model Ultra Librarian FDBL0200N100 CAD Model

Description

The ON Semiconductor FDBL0200N100 is a highly efficient, N-channel PowerTrench® MOSFET designed to deliver optimal performance in a wide range of applications. This state-of-the-art device is a testament to ON Semiconductor's commitment to providing innovative power management solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low RDS(on): The FDBL0200N100 boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current of 100A, this MOSFET can handle high current applications with ease, making it ideal for power-intensive tasks.
  • Fast Switching Speed: The device's fast switching characteristics ensure minimal switching losses and are well-suited for high-frequency circuits.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process enhances the device's performance by optimizing the cell structure for reduced gate charge and lower capacitance.

Applications

The versatility of the FDBL0200N100 allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power supply units
  • Automotive systems
  • Switching regulators

Technical Specifications

Parameter Value
VDS (Drain-Source Voltage) 100V
ID (Continuous Drain Current) 100A
RDS(on) 2.0 mΩ (typical)
Qg (Total Gate Charge) 220 nC (typical)

With its robust design, the FDBL0200N100 is built to ensure reliable performance and longevity, making it a smart choice for engineers and designers looking for a high-quality, high-performance power MOSFET. The ON Semiconductor FDBL0200N100 is not only effective in reducing power losses but also in promoting energy efficiency across a multitude of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.7444 $53.9552
19+ $5.5339 $105.1441
28+ $5.3610 $150.1080
39+ $5.1880 $202.3320
50+ $5.0151 $250.7550
67+ $4.4963 $301.2521
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,150 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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