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FDME410NZT

Part No FDME410NZT
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7A MICROFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1025 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MicroFet 1.6x1.6 Thin
Package / Case 6-PowerUFDFN
Base Product Number FDME41
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378412-FDME410NZT
Ultra Librarian 3D Model Ultra Librarian FDME410NZT CAD Model

Description

The ON Semiconductor FDME410NZT is a high-performance, single N-Channel, PowerTrench<sup>® MOSFET that is designed to deliver efficient power management and conversion for a wide range of applications. This MOSFET utilizes ON Semiconductor's advanced technology to provide low on-resistance and minimal gate charge, making it an ideal choice for high-efficiency power supplies, motor controls, and other power-intensive electronic circuits.

Key Features

  • Low On-Resistance: The FDME410NZT boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Power Density: Its compact PowerTrench<sup>® package allows for a smaller footprint and higher power density, enabling sleeker and more compact designs.
  • High Switching Performance: With fast switching speeds and minimal gate charge, this MOSFET is well-suited for applications requiring high-frequency operation.
  • Robust Thermal Performance: The device is engineered for superior thermal performance, ensuring reliability and longevity even under high temperature operating conditions.
  • Low Gate Charge: The low gate charge characteristic of FDME410NZT minimizes switching losses, which is critical for high-efficiency power conversion.

Applications

The FDME410NZT is versatile and can be used in various applications, including:

  • DC/DC Converters
  • Power Supply Load Switches
  • Battery Management Systems
  • Motor Drives and Controls
  • Switch Mode Power Supplies (SMPS)

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 8A Power Dissipation (P<sub>D) 2.5W R<sub>DS(on) 14mΩ Package PowerTrench<sup>® MOSFET

For designers and engineers seeking a reliable and efficient power switching solution, the ON Semiconductor FDME410NZT MOSFET is a standout choice that combines performance with durability for a wide array of electronic applications.

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