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FDMS3660AS

Part No FDMS3660AS
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 13A/30A 8QFN / Mosfet Array 2 N-Channel (Dual) 30V 13A, 30A 1W Surface Mount Power56
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 30A
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Power - Max 1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package Power56
Base Product Number FDMS3660
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FDMS3660ASDKR,FDMS3660ASCT,FDMS3660ASTR
Standard Package 3,000
Win Source Part Number 1145078-FDMS3660AS
Ultra Librarian 3D Model Ultra Librarian FDMS3660AS CAD Model

Description

ON Semiconductor FDMS3660AS: A High-Performance PowerTrench® MOSFET

The FDMS3660AS from ON Semiconductor is a state-of-the-art N-Channel PowerTrench® MOSFET designed to deliver high efficiency and performance for a wide range of power management applications. This device is part of ON Semiconductor's highly acclaimed PowerTrench series, which is renowned for providing low on-resistance (RDS(on)) and low gate charge (Qg), leading to superior switching performance and minimized conduction losses.

The FDMS3660AS is optimized for synchronous rectification in DC/DC converters and is also well-suited for other applications such as power supplies, motor drives, and power inverter systems. Its advanced features and robust design make it an ideal choice for high-density power systems where efficiency and reliability are critical.

Key Features:

  • Low On-Resistance: With an RDS(on) as low as 3.3 mΩ at VGS = 10 V, the FDMS3660AS ensures minimal power loss during operation, enhancing overall system efficiency.
  • High Power Density: The device comes in a compact 5 mm x 6 mm Power 56 package, which allows for a smaller footprint and reduced board space without compromising on power handling capabilities.
  • High-Temperature Performance: Capable of operating at a junction temperature range of -55°C to 150°C, the FDMS3660AS is designed to withstand harsh environments and maintain stable performance.
  • Fast Switching: The low gate charge and optimized capacitance profile enable fast switching speeds, reducing switching losses and improving the power efficiency of the application.
  • Environmentally Friendly: The device is RoHS compliant and free from lead and other environmentally sensitive materials, making it a responsible choice for electronic designs.

Applications:

  • DC/DC Converters
  • Power Supplies for CPU, GPU, Memory, and Motherboards
  • Motor Drives
  • Power Inverter Systems
  • Point of Load (POL) Modules

In summary, the ON Semiconductor FDMS3660AS N-Channel PowerTrench® MOSFET is a highly efficient, reliable, and versatile component that meets the needs of modern high-performance power management systems. Its combination of low on-resistance, fast switching, and high-temperature resilience makes it an excellent choice for engineers looking to optimize their power designs for both performance and space.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9013 $58.5845
160+ $0.7396 $118.3360
245+ $0.7165 $175.5425
335+ $0.6934 $232.2890
435+ $0.6703 $291.5805
580+ $0.6010 $348.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,503 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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