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FDMS86150A

Part No FDMS86150A
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description FET 100V 4.85 MOHM PQFN56
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series PowerTrench®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4665 pF @ 50 V
Power Dissipation (Max) 2.7W (Ta), 113W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Power56
Package / Case 8-PowerTDFN
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 823239-FDMS86150A
Ultra Librarian 3D Model Ultra Librarian FDMS86150A CAD Model

Description

ON Semiconductor FDMS86150A N-Channel PowerTrench® MOSFET

The FDMS86150A is a state-of-the-art N-Channel PowerTrench® MOSFET produced by ON Semiconductor, a leader in power and signal management solutions. This high-performance MOSFET is designed to handle high-efficiency power conversion and switching with minimal power loss, making it an ideal choice for a wide range of applications including DC-DC converters, power supplies, motor drives, and more.

With an advanced trench technology, the FDMS86150A offers excellent RDS(on) and low gate charge performance, which translates to reduced conduction and switching losses. This MOSFET operates with a drain-source voltage (VDSS) of 150V, which provides a good safety margin for applications with high voltage requirements. It also features a continuous drain current (ID) of 13A, ensuring it can handle significant current loads without overheating or failing.

The device's power dissipation is rated at 4.5W, which is indicative of its ability to manage thermal conditions effectively. Its low total gate charge (Qg) results in faster switching speeds, improving the efficiency of power conversion circuits. Additionally, the FDMS86150A has a maximum junction temperature of 150°C, providing a robust thermal performance for challenging environments.

The FDMS86150A comes in a compact 8-PowerTDFN package with a footprint that is optimized for reduced board space, making it suitable for space-constrained applications. The package is designed for improved thermal resistance, ensuring reliable operation under high current and temperature conditions.

ON Semiconductor has equipped the FDMS86150A with built-in ESD protection, which safeguards the device against electrostatic discharge events, enhancing its durability and reliability. This MOSFET is RoHS compliant, reflecting ON Semiconductor's commitment to environmental responsibility by avoiding the use of hazardous substances in its manufacturing processes.

In summary, the ON Semiconductor FDMS86150A N-Channel PowerTrench® MOSFET is a high-efficiency, reliable, and robust component suitable for a variety of high-performance power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.7474 $54.2318
16+ $6.3568 $101.7088
25+ $6.1582 $153.9550
34+ $5.9595 $202.6230
44+ $5.7609 $253.4796
59+ $5.1649 $304.7291
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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