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FDP023N08B-F102

Part No FDP023N08B-F102
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO220-3 / N-Channel 75 V 120A (Tc) 245W (Tc) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.35mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13765 pF @ 37.5 V
Power Dissipation (Max) 245W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number FDP023
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FDP023N08B-F102OS,FDP023N08B_F102,1990-FDP023N08B-F102,FDP023N08B-F102-ND,FDP023N08B_F102-ND
Standard Package 50
Win Source Part Number 1324721-FDP023N08B-F102
Ultra Librarian 3D Model Ultra Librarian FDP023N08B-F102 CAD Model

Description

ON Semiconductor FDP023N08B-F102 MOSFET

The FDP023N08B-F102 from ON Semiconductor is a high-performance N-channel PowerTrench® MOSFET designed to deliver efficiency and reliability for a wide range of applications. This field-effect transistor is a part of ON Semiconductor's state-of-the-art MOSFET technology, which provides superior power management and space-saving solutions to modern electronic systems.

With a drain-source voltage (V<sub>DS) of 80V and a continuous drain current (I<sub>D) of 180A, this MOSFET is well-suited for high-power applications that require low on-resistance and high switching speeds. The FDP023N08B-F102 features an R<sub>DS(on) of just 2.3mΩ at V<sub>GS=10V, which translates into minimal conduction losses and improved overall efficiency.

The device is housed in a TO-220 package, which is known for its robustness and excellent thermal performance. This makes the FDP023N08B-F102 an ideal choice for power supply designs, motor drives, and other applications where efficient heat dissipation is critical. Its maximum junction temperature of 175°C provides a wide operating temperature range, further enhancing its versatility in challenging environments.

ON Semiconductor's FDP023N08B-F102 also incorporates advanced features such as fast switching speed, low gate charge (Q<sub>G), and a body diode with low reverse recovery charge (Q<sub>rr), which help to reduce switching losses and improve power efficiency in high-frequency applications. Additionally, the device offers a high avalanche energy rating, ensuring reliability and robustness against unexpected voltage transients.

This MOSFET is RoHS compliant and free from lead and other environmentally sensitive materials, making it a suitable choice for eco-friendly and energy-conscious designs. Whether you're developing power management systems, working on automotive electronics, or creating industrial automation solutions, the FDP023N08B-F102 from ON Semiconductor provides the performance and reliability needed to drive your projects forward.

With its combination of low on-resistance, high current capability, and fast switching performance, the FDP023N08B-F102 is engineered to meet the demands of modern high-efficiency power conversion and management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.1864 $50.2368
30+ $3.4350 $103.0500
46+ $3.3277 $153.0742
63+ $3.2203 $202.8789
81+ $3.1130 $252.1530
108+ $2.7910 $301.4280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,950 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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