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FDP2D3N10C

Part No FDP2D3N10C
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 222A TO220-3 / N-Channel 100 V 222A (Tc) 214W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series PowerTrench®
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 222A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11180 pF @ 50 V
Power Dissipation (Max) 214W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number FDP2D3
Standard Package 50 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 919054-FDP2D3N10C
Ultra Librarian 3D Model Ultra Librarian FDP2D3N10C CAD Model

Description

The FDP2D3N10C from ON Semiconductor is a high-performance, N-channel PowerTrench<sup>® MOSFET designed for a wide range of applications requiring efficient power management and high reliability. This MOSFET utilizes advanced silicon technology to provide low on-resistance, minimal gate charge, and robust thermal characteristics, making it an ideal choice for power conversion and switching applications.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low drain-to-source on-resistance (R<sub>DS(on)) of 10 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 36 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
  • Fast Switching Performance: The FDP2D3N10C offers fast switching with a low gate charge (Q<sub>g), which reduces switching losses and enhances performance in high-frequency circuits.
  • Robust Thermal Management: The MOSFET is encapsulated in a TO-220 package, which provides excellent heat dissipation and allows for higher power handling in a compact form factor.
  • High Voltage Tolerance: With a maximum drain-to-source voltage (V<sub>DSS) of 100 V, it is capable of withstanding high voltage conditions, ensuring reliability in a variety of applications.

Applications

The FDP2D3N10C is versatile and can be used in an array of applications, including:

  • DC/DC Converters
  • Power Supplies
  • Motor Drives
  • Automotive Systems
  • Switch Mode Power Supplies (SMPS)
  • Power Management Circuits

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The FDP2D3N10C MOSFET is no exception, offering superior performance and reliability. It is designed to meet stringent industry standards, ensuring a long operational life and consistent performance in even the most challenging conditions.

Environmental Compliance

This product complies with RoHS directives, reflecting ON Semiconductor's dedication to environmental responsibility and the production of eco-friendly components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3214 $53.1424
33+ $3.1072 $102.5376
50+ $3.0000 $150.0000
72+ $2.7857 $200.5704
94+ $2.6786 $251.7884
117+ $2.5715 $300.8655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,950 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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