ON Semiconductor FDS8949_F085 Dual N/P-Channel PowerTrench® MOSFET

The ON Semiconductor FDS8949_F085 is a high-performance, dual N/P-Channel PowerTrench® MOSFET designed for power switching applications. This advanced MOSFET technology has been optimized to provide the most efficient power conversion with low on-state resistance (R<sub>DS(on)) and minimal gate charge (Q<sub>g), making it ideal for a wide range of applications, including power management, load switching, and battery protection circuits.

With its compact footprint, the FDS8949_F085 integrates two independent MOSFETs in a single SO-8 package, offering designers a space-saving solution for their circuit designs. The N-Channel MOSFET boasts a 30V drain-source voltage (V<sub>DSS) and a continuous drain current (I<sub>D) of 8.6A, while the P-Channel MOSFET features a V<sub>DSS of -20V and an I<sub>D of -6.5A. This combination allows for complementary switching configurations, which are beneficial in applications such as H-bridge motor drivers, power multiplexing, and synchronous buck or boost converters.

Key features of the FDS8949_F085 include its low gate charge, which enhances the overall efficiency by reducing switching losses, and its high-performance trench technology that minimizes R<sub>DS(on) to decrease conduction losses. Additionally, the device is characterized by a fast switching speed and excellent thermal performance, which are critical for maintaining reliability and longevity in high-power and high-frequency applications.

ON Semiconductor's commitment to quality and reliability is evident in the FDS8949_F085, which is built to meet the stringent requirements of the industrial and automotive markets. It is RoHS compliant and qualified to AEC-Q101 standards, ensuring that it can withstand harsh environments and deliver consistent performance over a wide temperature range.

Whether for power conversion in consumer electronics, industrial automation, or automotive systems, the FDS8949_F085 from ON Semiconductor is an excellent choice for engineers looking to optimize their power management solutions with a dual-channel MOSFET that offers both high efficiency and space-saving benefits.