Product Overview: FGH75T65SHD - ON Semiconductor

The FGH75T65SHD is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, a leader in power and signal management. This high-performance transistor is specifically designed for a wide range of power applications, offering a perfect blend of speed, efficiency, and reliability. It is an ideal choice for designers looking to improve the power density and efficiency of their systems.

Key Features

• High Current Capability: The FGH75T65SHD can handle a continuous collector current of up to 75A, making it suitable for high-power applications.
• Low On-State Voltage: This IGBT features a low V<sub>CE(sat) typically at 1.7V, which helps in reducing conduction losses and improving overall efficiency.
• Fast Switching Speed: With fast switching characteristics, the FGH75T65SHD minimizes switching losses and is well-suited for high-frequency operations.
• High Temperature Operation: It is designed to operate at junction temperatures of up to 175°C, ensuring reliability in harsh environments.
• Co-Packaged with Diode: The device comes with a co-packaged freewheeling diode, which provides additional protection during switching and reduces component count.

Applications

The FGH75T65SHD is versatile and can be used in a variety of applications, including:

• Uninterruptible Power Supplies (UPS)
• Motor Drives
• Power Inverters
• Induction Heating
• Renewable Energy Systems (e.g., Solar Inverters, Wind Turbines)

Technical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CE) 650V Continuous Collector Current (I<sub>C) 75A Pulsed Collector Current (I<sub>CM) 150A Power Dissipation (P<sub>D) 429W Junction Temperature (T<sub>j) -55°C to +175°C

With its robust design and superior performance, the FGH75T65SHD from ON Semiconductor is a reliable and efficient solution for designers looking to enhance their power management systems.