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FJN3307RTA

Part No FJN3307RTA
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 300MW TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250 MHz
Power - Max 300 mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number FJN330
Standard Package 2,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 745769-FJN3307RTA
Ultra Librarian 3D Model Ultra Librarian FJN3307RTA CAD Model

Description

ON Semiconductor FJN3307RTA High Voltage NPN Transistor

The ON Semiconductor FJN3307RTA is a robust high voltage NPN bipolar junction transistor (BJT) designed for a variety of applications that require high voltage operation and medium power handling capabilities. This transistor is part of ON Semiconductor's well-regarded portfolio of semiconductor components known for their reliability and performance.

The FJN3307RTA is capable of withstanding voltages up to 400V, making it an excellent choice for electronic circuits that operate at high voltages. Its collector-emitter voltage (VCEO) rating of 400V ensures that it can handle the demands of applications such as switch-mode power supplies, lighting circuits, and high voltage inverters.

With a continuous collector current (IC) rating of 500mA, the FJN3307RTA can drive moderate loads, making it suitable for amplification and switching applications. This transistor also features a power dissipation (PD) of 625mW, which contributes to its ability to handle medium power applications without overheating.

The device's hFE (DC current gain) is specified to be within the range of 30 to 240, ensuring a consistent and predictable amplification factor across different devices. This is particularly important in applications where precise control of gain is necessary.

ON Semiconductor has designed the FJN3307RTA with a TO-92 package, which is widely used in the industry and favored for its ease of installation. The TO-92 package is compact, making it suitable for designs where space is at a premium. Additionally, the package's through-hole mounting design allows for straightforward PCB assembly and solid mechanical attachment.

The FJN3307RTA also features low saturation voltage, which minimizes power loss and improves efficiency, an important consideration in power-sensitive designs. Its fast switching speeds enable high-frequency operation, which is crucial in modern electronic applications that require rapid signal processing.

In summary, the ON Semiconductor FJN3307RTA high voltage NPN transistor is a reliable and versatile component that offers excellent performance for a wide range of high voltage applications. Its robust design, combined with ON Semiconductor's commitment to quality, makes it a go-to choice for engineers and designers looking for a dependable transistor solution.

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