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FQD5P20TF

Part No FQD5P20TF
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 3.7A DPAK / P-Channel 200 V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series QFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.85A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number FQD5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,000
Win Source Part Number 1153767-FQD5P20TF
Ultra Librarian 3D Model Ultra Librarian FQD5P20TF CAD Model

Description

ON Semiconductor FQD5P20TF P-Channel QFET® MOSFET

The ON Semiconductor FQD5P20TF is a high-performance P-Channel QFET® MOSFET designed to deliver efficient power management and control in a wide range of electronic applications. This MOSFET features state-of-the-art technology that provides low on-resistance, high switching performance, and reliability, making it an ideal choice for power supply, motor control, and lighting applications.

The FQD5P20TF operates at -200V with a drain current of -4.6A, which ensures efficient handling of high voltage requirements with ease. Its low threshold voltage makes it suitable for low voltage operations, providing designers with flexibility in circuit design. The device comes in a robust TO-252 (DPAK) package that ensures a compact footprint while offering excellent power dissipation characteristics.

Key features of the FQD5P20TF include:

  • Low RDS(on): The device boasts a low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Power Dissipation: With a power dissipation of 1.4W, this MOSFET can handle significant power, making it suitable for high-power applications.
  • High Input Impedance: The high input impedance ensures minimal gate drive requirements, which is beneficial for power-sensitive circuits.
  • Fast Switching Speed: The fast switching capability of the FQD5P20TF enables efficient operation at high frequencies, which is crucial for reducing energy loss in switching applications.
  • RoHS Compliant: The device meets RoHS standards, which means it is manufactured without hazardous substances, making it environmentally friendly.

The FQD5P20TF is designed with ON Semiconductor's innovative QFET® technology that emphasizes energy efficiency without compromising performance. This makes the MOSFET an excellent choice for designers looking to improve the energy efficiency of their systems. Whether it's for power management in portable devices, load switching, or any application requiring a high-performance P-Channel MOSFET, the FQD5P20TF from ON Semiconductor is an outstanding component that combines reliability with advanced technical specifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5596 $58.7580
255+ $0.4592 $117.0960
390+ $0.4449 $173.5110
540+ $0.4305 $232.4700
695+ $0.4162 $289.2590
930+ $0.3731 $346.9830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,190 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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