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KSE5020S

Part No KSE5020S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description High Voltage, High Quality High Speed Switching : tF=0.1μs | TRANS NPN 500V 3A TO-126
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 500V
Vce Saturation (Maximum) at Ib, Ic 1V at 300mA, 1.5A
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 15 at 300mA, 5V
Maximum Power 30W
Frequency - Transition 18MHz
Temperature Range - Operating 150°C
Mounting Style Through Hole
Manufacturer Package TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1193660-KSE5020S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian KSE5020S CAD Model

Description

Introducing the KSE5020S NPN Epitaxial Silicon Transistor from ON Semiconductor

The KSE5020S is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is specifically engineered to deliver superior switching performance and high-voltage capability, making it an ideal choice for a variety of power amplification and switching applications.

With its epitaxial silicon construction, the KSE5020S offers excellent thermal and electrical stability, ensuring reliable operation even under demanding conditions. The device features a collector-emitter voltage (V<sub>CEO) of 800V, which allows it to handle high voltage applications with ease. Its collector current (I<sub>C) rating of 3A makes it suitable for medium power requirements.

The KSE5020S boasts a high gain-bandwidth product, providing efficient amplification at high frequencies. This characteristic, combined with its fast switching speeds, makes the transistor an excellent choice for applications in power supplies, lighting, and motor control circuits. Additionally, its robustness is further enhanced by its high breakdown voltages, ensuring that the device can withstand transient voltage spikes without degradation of performance.

ON Semiconductor has designed the KSE5020S with industry-standard TO-220 packaging, which offers ease of integration into existing designs. The package is well-known for its ability to dissipate heat effectively, contributing to the transistor's overall reliability and longevity.

The KSE5020S is also characterized by its low saturation voltage, which minimizes power loss and improves efficiency. This feature, along with its high current handling capability, makes it an energy-efficient solution for designers looking to optimize their power management systems.

In summary, the KSE5020S from ON Semiconductor is a versatile and reliable NPN transistor that provides high voltage capability, fast switching, and efficient performance. Its robust design and thermal efficiency make it a top choice for engineers and designers working on a wide range of electronic applications requiring reliable high-voltage and medium-power solutions.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the ON Semiconductor website or contact their local sales representative.

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