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MBT35200MT1G

Part No MBT35200MT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 35V 2A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 35V
Max Vce (sat) 310mV @ 20mA, 2A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 1.5A, 1.5V
Maximum Power Dissipation 625mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 022474-MBT35200MT1G
Ultra Librarian 3D Model Ultra Librarian MBT35200MT1G CAD Model

Description

ON Semiconductor MBT35200MT1G Overview

The MBT35200MT1G is a high-performance PNP bipolar transistor from ON Semiconductor, designed to deliver efficiency and reliability for a wide range of electronic applications. This versatile transistor features a compact SOT-23 package, making it suitable for space-constrained applications while providing excellent power dissipation and thermal management capabilities.

Key Features

  • High Current Gain: The device offers a high current gain (hFE) bandwidth product, ensuring good amplification characteristics for both analog and digital applications.
  • Low Saturation Voltage: It has a low collector-emitter saturation voltage, which reduces power loss and improves efficiency during operation.
  • Power Dissipation: With a power dissipation of 225mW, the MBT35200MT1G can handle moderate power levels, suitable for a variety of circuit designs.
  • Operating Temperature Range: The transistor can operate within a wide temperature range of -55°C to 150°C, allowing it to perform reliably in extreme conditions.

Applications

The MBT35200MT1G is ideal for use in a range of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers and switches
  • Power management in portable devices
  • Linear switching applications

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MBT35200MT1G is no exception. It is manufactured to meet rigorous standards, ensuring high reliability and performance consistency. The device is also RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Summary

The MBT35200MT1G from ON Semiconductor is a versatile PNP bipolar transistor that offers excellent performance for a wide array of electronic circuits. Its high current gain, low saturation voltage, and robust power dissipation make it a preferred choice for designers looking to optimize their applications for efficiency and reliability. Whether used for amplification, switching, or power management, this component is engineered to meet the demands of modern electronic challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1720 $58.4800
820+ $0.1411 $115.7020
1,270+ $0.1368 $173.7360
1,750+ $0.1324 $231.7000
2,260+ $0.1280 $289.2800
3,025+ $0.1147 $346.9675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 62,694 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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