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MGSF1N03LT1G

Part No MGSF1N03LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 2.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Input Capacitance 140pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 420mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 023222-MGSF1N03LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial
Family Name MSF1N03L
Introduction Date March 31, 1997
ECCN EAR99
Country of Origin China, Czech Republic, United States of America
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian MGSF1N03LT1G CAD Model

Description

ON Semiconductor MGSF1N03LT1G N-Channel MOSFET

The MGSF1N03LT1G is a high-performance N-Channel MOSFET designed and manufactured by ON Semiconductor, a leading company in the field of energy-efficient innovations. This MOSFET is part of ON Semiconductor's portfolio of power management devices, which are known for their reliability and efficiency in a wide range of electronic applications.

This particular MOSFET is designed to handle a continuous drain current of up to 1.1 A with a 30 V drain-to-source voltage, making it suitable for a variety of switching applications. Its low on-resistance of 0.2 Ohms ensures efficient operation with minimal power loss, which is critical for maintaining the overall energy efficiency of the system it is integrated into.

The MGSF1N03LT1G offers fast switching speeds, which is a vital characteristic for applications that require rapid on-off cycles. This feature, combined with its low threshold voltage, allows for better performance in high-speed circuits and contributes to the reduction of switching losses.

Encased in a compact SOT-23 package, the MGSF1N03LT1G is designed for surface-mount technology (SMT), which makes it ideal for use in space-constrained applications. Its small form factor is particularly beneficial in portable and wearable electronics where size and weight are critical considerations.

With its robust thermal performance, the MGSF1N03LT1G is capable of operating within a wide temperature range, ensuring reliability and stability across various environmental conditions. This feature is crucial for applications that may be subjected to high temperature variations, such as automotive or industrial electronics.

ON Semiconductor has also taken steps to ensure that the MGSF1N03LT1G meets environmental standards, making it a RoHS-compliant component. This demonstrates the company's commitment to producing environmentally friendly products that reduce the ecological footprint of electronic devices.

In summary, the MGSF1N03LT1G from ON Semiconductor is a versatile and efficient N-Channel MOSFET that offers excellent performance for a range of applications, from power management to high-speed switching. Its compact size, energy efficiency, and robustness make it a preferred choice for engineers and designers looking to optimize their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
505+ $0.0998 $50.3990
1,070+ $0.0935 $100.0450
1,660+ $0.0904 $150.0640
2,385+ $0.0840 $200.3400
3,095+ $0.0809 $250.3855
3,865+ $0.0777 $300.3105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 105,000 pieces
MOQ: 505 pcs
Order Increment : 1 pcs
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