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MGSF2N02ELT1G

Part No MGSF2N02ELT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.8A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.5nC @ 4V
Max Input Capacitance 150pF @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 023223-MGSF2N02ELT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MGSF2N02ELT1G CAD Model

Description

Product Overview: MGSF2N02ELT1G

The MGSF2N02ELT1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of ON Semiconductor's extensive portfolio of power management devices, offering a combination of low on-resistance and high switching performance, making it an ideal choice for a variety of power switching applications.

Key Features

  • Device Type: N-Channel MOSFET
  • Package: Supplied in a compact SOT-23 surface-mount package, it is designed to save valuable board space and reduce end-product size.
  • Drain-to-Source Voltage (Vdss): Rated at 20V, allowing it to handle moderate voltage applications with ease.
  • Continuous Drain Current (Id): Capable of a continuous drain current of 2.5A, making it suitable for high current applications.
  • RDS(on): Features low on-resistance of 70 mΩ at VGS = 4.5V, providing high efficiency and reduced power loss.
  • Gate Charge (Qg): Low gate charge ensures fast switching performance, which is critical for applications requiring high-speed operation.
  • Temperature Range: Operates over a broad temperature range, making it reliable in various environmental conditions.

Applications

The MGSF2N02ELT1G MOSFET is versatile and can be used in a wide range of applications, including:

  • DC/DC Converters
  • Power Management Circuits
  • Motor Drives
  • Switching Regulators
  • Battery Powered Systems
  • Load Switching

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The MGSF2N02ELT1G is no exception, undergoing rigorous testing to ensure it performs to specifications under varying conditions. Its robust design is aimed at providing a long operational life, making it a trustworthy component in any power management or switching application.

For designers and engineers looking for a reliable N-channel MOSFET that offers efficient power handling and space-saving features, the MGSF2N02ELT1G from ON Semiconductor is an excellent choice that balances performance with compactness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1756 $50.0460
610+ $0.1645 $100.3450
945+ $0.1589 $150.1605
1,355+ $0.1478 $200.2690
1,760+ $0.1423 $250.4480
2,195+ $0.1367 $300.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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