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MJB44H11T4G

Part No MJB44H11T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 10A D2PAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 10A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 1V @ 400mA, 8A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 40 @ 4A, 1V
Maximum Power Dissipation 2W
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 003585-MJB44H11T4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJB44H11T4G CAD Model

Description

ON Semiconductor MJB44H11T4G Bipolar Transistor

The MJB44H11T4G is a robust bipolar power transistor from ON Semiconductor, designed to meet the needs of a wide array of high-power applications. This device is part of the ON Semiconductor portfolio of power transistors, which are renowned for their reliability, efficiency, and performance. The MJB44H11T4G is particularly suited for use in power amplification and switching applications where high current and voltage handling capabilities are paramount.

Key Features

  • High Collector-Emitter Voltage (VCEO): The transistor can handle a collector-emitter voltage up to 80V, making it suitable for various circuit designs that require high voltage operation.
  • High Collector Current (IC): With a continuous collector current rating of 10A, the MJB44H11T4G can drive high current loads, making it ideal for power amplifiers and switching regulators.
  • Low Saturation Voltage: The low collector-emitter saturation voltage ensures that the transistor operates efficiently, minimizing power loss and heat generation.
  • Complementary PNP Type Available: For applications requiring a push-pull configuration, a complementary PNP type is available, allowing for easy implementation of complementary or symmetrical designs.
  • High Power Dissipation: With a power dissipation capability of 50W, this transistor can handle significant amounts of power without compromising performance or reliability.

Applications

  • Power supply circuits
  • DC-DC converters
  • Motor controllers
  • Audio amplifiers
  • Switching regulators

The MJB44H11T4G is housed in a TO-263 (D2PAK) package, which offers a compact footprint while still providing excellent thermal performance. This packaging makes it suitable for high-density PCB layouts where space is at a premium but thermal management is critical. Additionally, the device features a rugged design that can withstand the stresses of industrial environments.

ON Semiconductor's commitment to quality ensures that the MJB44H11T4G transistor delivers consistent performance and reliability, making it a preferred choice for engineers and designers working on high-performance power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0339 $62.0340
120+ $0.9672 $116.0640
190+ $0.9339 $177.4410
270+ $0.8672 $234.1440
350+ $0.8338 $291.8300
435+ $0.8004 $348.1740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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