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MJD210T4G

Part No MJD210T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 25V 5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 1.8V @ 1A, 5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 45 @ 2A, 1V
Maximum Power Dissipation 1.4W
Frequency - Transition 65MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003600-MJD210T4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MJD210T4G CAD Model

Description

The MJD210T4G is a high-performance NPN bipolar power transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is part of the MJD series, known for its robustness and reliability in various electronic applications. It is specifically engineered to address the needs of medium power amplification and switching.

Key Features

  • High Collector-Emitter Voltage (V<sub>CEO): The MJD210T4G boasts a collector-emitter voltage rating of up to 25V, making it suitable for a broad range of applications.
  • Collector Current Capability: It can handle a continuous collector current (I<sub>C) of up to 3A, allowing it to drive moderate loads with ease.
  • Power Dissipation: With a power dissipation (P<sub>D) of 20W, this transistor can manage a significant amount of energy without overheating, ensuring stable performance.
  • High DC Current Gain (h<sub>FE): The device features a high DC current gain, which provides efficient amplification of the input signal.
  • Complementary PNP Type Available: A complementary PNP type, MJD200T4G, is available to provide designers with additional flexibility in creating push-pull configurations.

Applications

The MJD210T4G is versatile and can be used in a variety of applications, including:

  • Power management in consumer electronics
  • Linear switching in industrial control systems
  • Driver stages in audio amplifiers
  • DC-DC converters and power supplies
  • Automotive and telecommunication circuits

Package and Quality

This transistor comes in a surface-mount DPAK (TO-252) package, which is not only space-efficient but also allows for excellent power dissipation and thermal management. The MJD210T4G is RoHS compliant and adheres to ON Semiconductor's commitment to environmentally friendly manufacturing processes.

Conclusion

The MJD210T4G is an ideal choice for designers looking for a reliable NPN transistor capable of handling medium power applications. Its combination of high voltage rating, current handling, power dissipation, and DC current gain makes it a versatile component in various electronic circuits. With the backing of ON Semiconductor's reputation for quality and performance, the MJD210T4G is sure to be a valuable addition to any electronic design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3968 $51.5840
310+ $0.3256 $100.9360
480+ $0.3154 $151.3920
660+ $0.3052 $201.4320
850+ $0.2951 $250.8350
1,135+ $0.2646 $300.3210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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