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MJD2955G

Part No MJD2955G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 10A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 1 Weeks
Features Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 1.75 W Surface Mount DPAK
Manufacturer ON Semiconductor
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name MJD2955
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number MJD2955G-ND, MJD2955GOS
Quantity per package 75
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 884894-MJD2955G
Ultra Librarian 3D Model Ultra Librarian MJD2955G CAD Model

Description

The MJD2955G is a high-performance PNP bipolar power transistor designed and manufactured by ON Semiconductor. This robust transistor is well-suited for a wide range of power amplification and switching applications, making it an ideal choice for designers and engineers looking to enhance their electronic projects.

With a continuous collector current rating of up to 10 A and a collector-emitter voltage rating of 60 V, the MJD2955G is capable of handling significant power levels. The device is designed to offer low collector-emitter saturation voltage, which ensures efficiency and minimizes power loss during operation.

The MJD2955G is part of ON Semiconductor's MJD series, which are known for their high reliability and performance in a DPAK surface-mount package. This package is not only compact but also offers excellent power dissipation characteristics, making it suitable for space-constrained applications while still providing the thermal performance required for consistent operation.

The power transistor also features fast switching speeds, which is essential for applications that require quick response times, such as switch-mode power supplies and motor control circuits. Its ability to switch efficiently between states helps reduce energy waste and improves the overall performance of the circuit.

ON Semiconductor has designed the MJD2955G with a focus on robustness, incorporating features that protect against overcurrent and thermal overload. This ensures that the device can handle the rigors of daily use and extends its operational lifespan, thereby providing a reliable solution for end-users.

In summary, the MJD2955G from ON Semiconductor is a high-quality PNP power transistor that offers a blend of power handling, efficiency, and speed. Its compact DPAK package, combined with its protective features, makes it a versatile component suitable for a variety of power applications. Whether used in amplification, switching, or control circuits, the MJD2955G is engineered to deliver performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8869 $53.2140
140+ $0.7278 $101.8920
215+ $0.7050 $151.5750
295+ $0.6823 $201.2785
380+ $0.6595 $250.6100
510+ $0.5913 $301.5630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 125 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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