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Same model may have multiple batches, images only for reference.
VQ3001P-E3
Same model may have multiple batches, images only for reference.

VQ3001P-E3

Part No VQ3001P-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N/2P-CH 30V 14DIP
Datasheet
VQ3001P-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N and 2 P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 850mA, 600mA
Maximum Rds On at Id,Vgs 1 Ohm @ 1A, 12V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 110pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Win Source Part Number 399191-VQ3001P-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VQ3001P-E3 CAD Model

Description

The VQ3001P-E3 is a FET that is designed to provide reliable performance in a variety of electronic applications manufactured by Vishay.

  • FET Type: 2 N and 2 P-channel FET
  • Feature: Standard
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Rds On: 1 Ohm @ 1A, 12V

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