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MJD44H11G

Part No MJD44H11G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 1V @ 400mA, 8A
Collector Cut-off Current(Max) 1μA
Typical Gain (hFE) (Min) 40 @ 4A, 1V
Maximum Power Dissipation 1.75W
Frequency - Transition 85MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003632-MJD44H11G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Audio, Industrial
Family Name MJD44H11
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Japan, Malaysia, Vietnam
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MJD44H11G CAD Model

Description

ON Semiconductor MJD44H11G NPN Power Transistor

The MJD44H11G is a high-performance NPN bipolar power transistor designed and manufactured by ON Semiconductor. This device is specifically engineered to deliver exceptional power amplification and switching capabilities, making it a versatile component suitable for a wide range of electronic applications.

Constructed with state-of-the-art silicon technology, the MJD44H11G offers a collector-emitter voltage (VCEO) of 80V, collector current (IC) of up to 8A, and total power dissipation of 20W at 25°C. Its high current capacity, coupled with the ability to handle significant power levels, makes it an ideal choice for power regulation circuits, motor controllers, and high-speed switching applications.

The transistor comes in a compact DPAK (TO-252) surface-mount package, which not only saves valuable board space but also ensures improved thermal performance due to its excellent power dissipation capabilities. This packaging allows for efficient heat dissipation, thereby enhancing the reliability and longevity of the device when operating in high-power and high-temperature environments.

Key Features:

  • NPN Bipolar Power Transistor
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector Current (IC): 8A
  • Total Power Dissipation: 20W at 25°C
  • High DC Current Gain (hFE)
  • Fast Switching Speeds
  • DPAK (TO-252) Surface-Mount Package
  • Pb-Free, RoHS Compliant, and Halogen-Free

In addition, the MJD44H11G features a high DC current gain (hFE), which ensures that the transistor can be driven with relatively low base currents, thus improving the overall efficiency of the circuit. The device also boasts fast switching speeds, which is essential for applications that require quick response times.

ON Semiconductor's commitment to environmental sustainability is evident as the MJD44H11G is designed to be Pb-free, RoHS compliant, and halogen-free, reducing the environmental impact and meeting the requirements for eco-friendly electronic products.

Whether you are designing power supplies, motor controls, or any other application that demands robust power handling, the MJD44H11G from ON Semiconductor is a reliable and efficient choice that promises performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6566 $52.5280
190+ $0.5387 $102.3530
290+ $0.5219 $151.3510
400+ $0.5051 $202.0400
515+ $0.4882 $251.4230
690+ $0.4377 $302.0130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,200 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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