The MJE170G is a high-performance power transistor designed and manufactured by the renowned ON Semiconductor. This device is part of the epitaxial planar transistor series, which is widely used in a variety of power amplification and switching applications due to its robustness and reliability.

Key Features

• Voltage Ratings: The MJE170G boasts a collector-emitter voltage (V_CEO) of 40V, making it suitable for moderate voltage applications.
• Current Handling: With a continuous collector current (I_C) rating of up to 3A, this transistor can handle significant power loads.
• Power Dissipation: It has a power dissipation capability (P_D) of 20W, ensuring efficient operation under high power conditions.
• High Gain Bandwidth Product: The device features a transition frequency (f_T) of 30MHz, which is indicative of its ability to work effectively at high frequencies.
• Thermal Performance: The MJE170G is equipped with a thermal resistance junction-to-case (R_θJC) of 3.125 °C/W, providing effective heat dissipation during operation.

Applications

The MJE170G is incredibly versatile, suitable for a range of applications, including:

• Power regulators
• DC-DC converters
• Motor control circuits
• Audio amplifiers
• Switching circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the MJE170G is no exception. The device is built to meet or exceed industry standards for performance and reliability. It is also designed with a focus on energy efficiency, making it an environmentally friendly choice for power transistor applications.

Package and Availability

The MJE170G comes in a TO-225 package, which is a compact and sturdy form factor that allows for easy integration into a wide range of electronic circuits. The product is available through various distributors and can be ordered in bulk quantities to meet the needs of large-scale production environments.