The MJE18002G is a high-voltage, high-speed power transistor designed by ON Semiconductor, a leader in energy-efficient innovations. This bipolar junction transistor (BJT) is specifically engineered for use in high-performance power switching applications, such as power supplies, converters, and inverters, where reliability and efficiency are paramount.

Key Features

• Voltage and Current Ratings: The device boasts a collector-emitter voltage (VCEO) of 450V and a collector current (IC) of up to 2A, making it suitable for handling high voltage and moderate current applications.
• Speed: With a transition frequency (fT) of 4MHz, the MJE18002G offers fast switching, which is essential for reducing switching losses and improving overall system efficiency.
• Power Dissipation: It has a power dissipation capability of 50W, ensuring that the device can handle significant power levels without overheating.
• TO-220 Package: Enclosed in a TO-220 package, the MJE18002G provides a compact footprint while allowing for effective thermal management.
• High Reliability: ON Semiconductor's rigorous manufacturing standards ensure that the MJE18002G exhibits high reliability and long operational life, which is critical for industrial and commercial power applications.

Applications

The MJE18002G is versatile and can be used in a variety of applications. Some common uses include:

• Switching regulators
• Motor controls
• High-frequency inverters
• Power amplifiers

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and quality assurance. The MJE18002G complies with RoHS and is manufactured under ISO 9001 quality management systems, ensuring that it meets the highest standards for environmental safety and product quality.

Whether you're designing a new power supply or upgrading an existing system, the MJE18002G from ON Semiconductor is an excellent choice for a reliable and efficient power transistor.