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MJE371G

Part No MJE371G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 40V 4A 4000mW 3-Pin(3+Tab) TO-225 Box / TRANS PNP 40V 4A TO225AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 4A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 40 @ 1A, 1V
Power - Max 40W
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 788851-MJE371G
Popularity Medium
Supply and Demand Status Limited
Family Name MJE371
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MJE371G CAD Model

Description

ON Semiconductor MJE371G Plastic Medium Power PNP Silicon Transistor

The MJE371G from ON Semiconductor is a plastic medium-power PNP silicon transistor designed for high-voltage and fast-switching applications. This device is a reliable component for a wide range of electronic circuits, offering a blend of performance and durability that makes it suitable for industrial, commercial, and entertainment products.

The transistor comes in a TO-225 case, which provides a compact form factor while ensuring adequate heat dissipation. It is capable of handling collector-emitter voltages up to 300V, with a collector current of up to 1A, making it a robust choice for driving medium-power loads. Additionally, the MJE371G boasts a collector dissipation of 20W at 25°C, which contributes to its efficiency and thermal stability in operation.

With a transition frequency of 15MHz, the MJE371G is suitable for applications requiring fast switching characteristics. This feature is particularly beneficial in audio amplifiers, switching regulators, and other high-frequency signal processing circuits where speed is crucial.

ON Semiconductor has designed the MJE371G with an emphasis on reliability, as evidenced by its built-in features that protect the device under adverse conditions. It includes a reverse-bias SOA (Safe Operating Area) protection, which guards the transistor against voltage spikes and transient conditions that could otherwise cause damage.

The MJE371G transistor is also characterized by its high DC current gain, with a range of 30 to 240 (h<sub>FE), ensuring that it can be driven with low base currents, making it compatible with a variety of control circuits and microcontrollers.

For those looking to incorporate the MJE371G into their designs, ON Semiconductor provides comprehensive technical support, including detailed datasheets, application notes, and simulation models. This enables designers to fully understand the capabilities of the transistor and how to integrate it effectively into their applications.

In summary, the ON Semiconductor MJE371G PNP silicon transistor is a versatile and robust component suitable for a variety of power applications where medium power handling and high switching speeds are required. Its TO-225 package, high voltage and current ratings, and protective features make it a reliable choice for engineers and designers in various fields.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6996 $59.4660
205+ $0.5740 $117.6700
315+ $0.5562 $175.2030
430+ $0.5382 $231.4260
560+ $0.5202 $291.3120
745+ $0.4664 $347.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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