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Same model may have multiple batches, images only for reference.
SIB411DK-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIB411DK-T1-E3

Part No SIB411DK-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 10 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB411
Other Names SIB411DK-T1-E3CT,SIB411DK-T1-E3DKR,SIB411DK-T1-E3TR,SIB411DKT1E3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277550-SIB411DK-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIB411DK-T1-E3 CAD Model

Description

The SIB411DK-T1-E3 from Vishay Siliconix is a P-channel MOSFET transistor with a TrenchFET® series technology.

  • Mounting: surface mount device (SMD)
  • Package: PowerPAK® SC-75-6 package
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Power Dissipation: 2.4W (Ta), 13W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
  • Supplier Device Package: PowerPAK® SC-75-6
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: obsolete
  • Popularity: low

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