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IRFU9010PBF

Part No IRFU9010PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 5.3A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.1nC @ 10V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047226-IRFU9010PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU9010PBF CAD Model

Description

The IRFU9010PBF is a P-channel MOSFET from Vishay with a drain-source breakdown voltage of 50V and a continuous drain current of 5.3A.

  • Manufacturer: Vishay
  • Product Name: IRFU9010PBF
  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 5.3A
  • Maximum Power Dissipation: 25W (Tc)
  • Maximum Rds On @ Id,Vgs: 500 mOhm @ 2.8A, 10V
  • Mounting Type: through hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 9.1nC @ 10V
  • Maximum Input Capacitance: 240pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Lifecycle Status: active

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