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MMBT2222LT3G

Part No MMBT2222LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.6A SOT-23
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor NPN 30 V 600 mA 250MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Manufacturer ON Semiconductor
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3 (TO-236)
Family Name MMBT2222
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Quantity per package 10000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 927493-MMBT2222LT3G
Ultra Librarian 3D Model Ultra Librarian MMBT2222LT3G CAD Model

Description

ON Semiconductor's MMBT2222LT3G Product Overview

The MMBT2222LT3G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplifier and switching applications. This versatile transistor is a surface-mount device that comes in a small SOT-23 package, making it ideal for space-constrained applications where a compact footprint is essential.

Key Features

  • Transistor Polarity: NPN - The MMBT2222LT3G is an NPN transistor, which means it is designed to have electrons as the charge carriers. This type of transistor is commonly used for amplification and switching purposes.
  • Collector-Emitter Voltage (Vceo): 40V - With a collector-emitter voltage rating of 40V, this device can handle moderate voltage applications, making it suitable for a wide range of electronic circuits.
  • Collector Current (Ic): 600mA - The transistor can support a continuous collector current up to 600mA, allowing it to drive moderate loads.
  • Power Dissipation (Pd): 350mW - The MMBT2222LT3G is capable of dissipating up to 350mW, which is sufficient for many low to medium power applications.
  • DC Current Gain (hFE): 100 to 300 - This range of DC current gain ensures that the transistor can amplify the input signal effectively, making it a good choice for various amplification needs.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - The device can operate and be stored in a wide temperature range, offering reliability under various environmental conditions.
  • RoHS Compliant: The MMBT2222LT3G meets the Restriction of Hazardous Substances (RoHS) directive, which makes it suitable for use in environmentally sensitive applications.

Applications

The MMBT2222LT3G is a versatile component that can be used in a diverse array of electronic circuits. Its typical applications include:

  • Signal amplification
  • Switching loads
  • Linear amplification
  • Driver stages in hi-fi amplifiers and television circuits
  • Control systems
  • Power management functions

With its excellent amplification characteristics and switching capabilities, the MMBT2222LT3G is a reliable choice for designers and engineers looking for a general-purpose transistor that delivers consistent performance and is compatible with automated assembly processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0658 $57.9040
2,130+ $0.0543 $115.6590
3,335+ $0.0520 $173.4200
4,550+ $0.0508 $231.1400
5,815+ $0.0497 $289.0055
7,895+ $0.0439 $346.5905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400,000 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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