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MMBT2907AM3T5G

Part No MMBT2907AM3T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 265mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-723
Win Source Part Number 1078259-MMBT2907AM3T5G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT2907AM3T5G CAD Model

Description

ON Semiconductor's MMBT2907AM3T5G: A High-Performance PNP Transistor

The MMBT2907AM3T5G is a versatile PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-quality semiconductor device is part of ON Semiconductor's extensive portfolio of transistors, catering to a wide array of electronic applications. The MMBT2907AM3T5G is specifically engineered to deliver reliable performance in switching and amplification tasks, making it a go-to component for modern electronic circuits.

Key Features

  • Transistor Type: PNP - This transistor allows for a smooth flow of current across the device when a negative base voltage is applied.
  • Voltage Ratings: It supports a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -60V, and an emitter-base voltage (VEBO) of -5V, offering a broad operating range for various applications.
  • Current Capacity: The MMBT2907AM3T5G can handle a continuous collector current (IC) of up to -600mA, making it suitable for moderate power handling requirements.
  • Power Dissipation: With a power dissipation of 225mW, this transistor can efficiently handle the thermal energy generated during operation without compromising performance.
  • High Gain Bandwidth Product: Featuring a transition frequency (ft) of 200MHz, the MMBT2907AM3T5G is capable of high-frequency operation, which is essential for fast switching applications.

Applications

The MMBT2907AM3T5G is ideal for a variety of electronic circuits, including but not limited to:

  • Signal amplification circuits
  • Switching power supplies
  • Motor controllers
  • Audio amplifiers
  • Linear amplification stages

Package and Reliability

Encased in a SOT-23 package, the MMBT2907AM3T5G is designed for surface-mount technology (SMT), allowing for efficient assembly and space-saving PCB designs. The compact form factor contributes to its popularity in densely packed electronic assemblies. ON Semiconductor ensures that each transistor meets rigorous quality standards, providing reliable and consistent performance across a wide range of operating conditions.

In summary, the MMBT2907AM3T5G from ON Semiconductor is a high-quality PNP transistor that offers a perfect blend of efficiency, reliability, and versatility, making it well-suited for a multitude of electronic applications where switching and amplification are required.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1173 $50.4390
1,040+ $0.0963 $100.1520
1,610+ $0.0933 $150.2130
2,215+ $0.0903 $200.0145
2,865+ $0.0873 $250.1145
3,840+ $0.0782 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,328 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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