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SIS334DN-T1-GE3

Part No SIS334DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 640pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 11.3 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096493-SIS334DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIS334DN-T1-GE3 CAD Model

Description

The Vishay SIS334DN-T1-GE3 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V. Vishay SIS334DN-T1-GE3

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Mounting Type: SMD (SMT)
  • Case/Package: PowerPAK 1212-8
  • Power Dissipation: 3.8W (Ta), 50W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 11.3 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4571 $59.4230
310+ $0.3751 $116.2810
480+ $0.3634 $174.4320
660+ $0.3516 $232.0560
850+ $0.3400 $289.0000
1,140+ $0.3047 $347.3580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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