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MMBT4401LT1G

Part No MMBT4401LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SOT23 / Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023764-MMBT4401LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Family Name MMBT4401L
Introduction Date April 23, 1997
ECCN EAR99
Country of Origin China, Japan, Malaysia, United States of America
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MMBT4401LT1G CAD Model

Description

ON Semiconductor MMBT4401LT1G NPN Bipolar Transistor

The MMBT4401LT1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading manufacturer in the semiconductor industry. This versatile transistor is designed for general-purpose amplifier and switching applications, making it an essential component for a wide array of electronic circuits. Its compact SOT-23 package allows for efficient use of PCB real estate, making it suitable for space-constrained applications.

Key Features:

  • Transistor Type: NPN - This type of transistor is well-suited for amplification due to its high current gain.
  • Current Rating: The MMBT4401LT1G can handle continuous collector currents up to 600 mA, providing ample current for a variety of applications.
  • Voltage Ratings: It offers a collector-emitter voltage (Vceo) of 40V, a collector-base voltage (Vcbo) of 60V, and an emitter-base voltage (Vebo) of 6V, ensuring stable operation under a range of conditions.
  • Power Dissipation: With a power dissipation of 350 mW, this transistor can handle moderate power levels, making it suitable for a variety of electronic applications.
  • Gain Bandwidth Product (fT): The device has a transition frequency of 300 MHz which is indicative of its capability to handle high-frequency signals.
  • Operating Temperature Range: It can operate over a temperature range of -55°C to +150°C, providing reliability in diverse environmental conditions.
  • Package: The SOT-23 package is widely used and recognized for its small footprint and ease of integration into surface-mount technology (SMT) processes.

Applications:

The MMBT4401LT1G transistor is ideal for a variety of applications where general-purpose switching and amplification are required. Common uses include:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching circuits in consumer electronics
  • Control circuits in embedded systems
  • Power management in portable devices

ON Semiconductor's commitment to quality ensures that the MMBT4401LT1G transistor is a reliable and efficient choice for designers and engineers seeking performance and durability. Whether for prototyping or mass production, this BJT is a go-to component for electronic projects requiring a dependable NPN transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,015+ $0.0166 $50.0490
6,455+ $0.0155 $100.0525
10,000+ $0.0150 $150.0000
14,390+ $0.0139 $200.0210
18,660+ $0.0134 $250.0440
23,260+ $0.0129 $300.0540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 897,420 pieces
MOQ: 3015 pcs
Order Increment : 1 pcs
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