The MMBT4401M3T5G is a high-performance, versatile NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading figure in the field of energy-efficient innovations. This compact surface-mount device is designed for general-purpose amplifier and switching applications, encapsulated in an SOT-23 package, which is widely appreciated for its space-saving footprint.

Key Features

• Transistor Type: NPN - This allows the product to be used in a variety of electronic circuits where a PNP transistor would not be suitable.
• Voltage - Collector Emitter Breakdown (Max): 40V - The MMBT4401M3T5G can handle up to 40 volts across the collector-emitter junction, making it suitable for a broad range of applications.
• Current - Collector (Ic) (Max): 600mA - The device can control a collector current up to 600 milliamperes, providing sufficient power for most low to medium power requirements.
• Power - Max: 350mW - With a maximum power dissipation of 350 milliwatts, this transistor can be used in applications that require a moderate amount of power.
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V - The MMBT4401M3T5G guarantees a minimum DC current gain of 100 at a collector current of 10mA and a collector-emitter voltage of 1V, ensuring reliable amplification.
• Frequency - Transition: 300MHz - The transition frequency of 300MHz allows the transistor to be used in applications that operate within this frequency range, including RF amplification.
• Operating Temperature: -55°C to +150°C - A wide operating temperature range makes this device suitable for use in harsh environments.

Applications

The MMBT4401M3T5G is ideal for a variety of electronic circuits, including but not limited to:

• Signal amplification
• Switching applications
• Linear amplification
• Power management
• Consumer electronics
• Telecommunications
• Automotive sectors

ON Semiconductor's commitment to quality and performance is evident in the MMBT4401M3T5G, making it a reliable choice for designers and engineers looking for a general-purpose transistor that combines efficiency with a compact form factor.